Investigation of design parameters for radiation hard silicon microstrip detectors

In the context of the development of radiation hard silicon microstrip detectors for the CMS Tracker, we have investigated the dependence of interstrip and backplane capacitance as well as depletion and breakdown voltage on the design parameters and substrate characteristics of the devices. Measurements have been made for strip pitches between 60 and 240 μm and various strip implants and metal widths, using multi-geometry devices, fabricated on wafers of either left angle bracket1 1 1right-pointing angle bracket or left angle bracket1 0 0right-pointing angle bracket crystal orientation, of resistivities between 1 and 6 kΩcm and of thicknesses between 300 and 410 μm. The effect of irradiation on properties of devices has been studied with 24 GeV/c protons up to a fluence of 4.3×1014 cm−2.