Improving the control of the electroforming process in oxide-based memristive devices by X-ray nanopatterning

We explored the possibility to guide the forming process in a Ta/TiO2/Pt memristive device using an X-ray nanopatterning procedure, which enables the manipulation of the oxygen content at the nanoscale. The irradiation of selected areas of the sample by a 65 x 58 nm2 synchrotron X-ray nanobeam locally generated oxygen vacancies which resulted in the formation of a conductive filament in the desired position in the material. The subsequent application of an electric field between the electrodes was exploited to achieve reversible bipolar resistive switching. A multitechnique characterization was then performed, highlighting a local increase in the height of the crystal and the formation of a dislocation network, associated with the presence of Wadsley defects. Our results show that X-ray nanopatterning could open new avenues for a more deterministic implementation of electroforming in oxide-based memristive devices.We tuned the oxygen content in a Ta/TiO2/Pt memristive device at the nanoscale by a synchrotron X-ray nanobeam. We obtained a conductive filament of oxygen vacancies in the desired position in the material to achieve a controlled resistive switching.